NJVMJD2955T4G Bipolar Transistors - BJT BIP PNP 10A 60V TR

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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Name: NJVMJD2955T4G Bipolar Transistors BJT BIP PNP 10A 60V TR
Brand: onsemi
Price: 1 USD

Brand Name : onsemi

Model Number : NJVMJD2955T4G

MOQ : 2500

Price : Negotiabie

Payment Terms : T/T

Packaging Details : Carton packging

Transistor Polarity : PNP

Configuration : Single

Collector- Emitter Voltage VCEO Max : 60 V

Collector- Base Voltage VCBO : 70 V

Emitter- Base Voltage VEBO : 5 V

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Bipolar Transistors - BJT BIP PNP 10A 60V TR

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Bipolar Transistors - BJT
RoHS:	Details
Mounting Style:	SMD/SMT
Package / Case:	DPAK-3
Transistor Polarity:	PNP
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	60 V
Collector- Base Voltage VCBO:	70 V
Emitter- Base Voltage VEBO:	5 V
Collector-Emitter Saturation Voltage:	1.1 V
Maximum DC Collector Current:	10 A
Pd - Power Dissipation:	20 W
Gain Bandwidth Product fT:	2 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Qualification:	AEC-Q101
Series:	MJD2955
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
DC Collector/Base Gain hfe Min:	20 at 4 A, 10 VDC
DC Current Gain hFE Max:	100 at 4 A, 10 VDC
Height:	2.38 mm
Length:	6.73 mm
Product Type:	BJTs - Bipolar Transistors
	2500

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